000			01634nam a2200205Ia 4500
005			20250614124957.0
008			250109s9999 xx 000 0 und d
020			_a9780128105122 _qpbk
041			_aeng
082			_a621.38152 _bLAT
100			_aLatyshev, Alexander V. ; Dvurechenskii, Anatoliy V. ; Aseev, Alexander L.
245		0	_aAdvances In Semiconductor Nanostructures : Growth, Characterization, Properties And Applications _c/ Edited By Alexander V. Latyshev ; Anatoliy V. Dvurechenskii ; Alexander L. Aseev
250			_a1st ed.
260			_bElsevier _cc2017 _aAmsterdam
300			_axxiv, 527 p. _b: ill. _c; 24 cm.
504			_aBib and Ref
520			_aAdvances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.
650			_aNanostructures
942			_cREF
999			_c568123 _d568123