| 000 | 00767nam a2200241Ia 4500 | ||
|---|---|---|---|
| 008 | 191130s1995##################000#0#eng## | ||
| 020 | _a9780126822403 | ||
| 022 | _a95030713 | ||
| 040 |
_aACL _cACL |
||
| 082 | _a537.6225 TAK | ||
| 100 | _aTakeda, Eiji | ||
| 245 |
_aHot-carrier effects in MOS devices _cEiji Takeda, Cary Y. Yang, Akemi Miura-Hamada |
||
| 260 |
_aAmsterdam ; Boston _bElsevier / Academic Press _cc1995 |
||
| 300 | _axii, 312 p. : ill. ; 24 cm | ||
| 500 | _aIncludes bibliographical references (p. 187-301) and index | ||
| 650 | _aHot carriers | ||
| 650 | _aMetal oxide semiconductors | ||
| 700 | _aMiura-Hamada, Akemi | ||
| 700 | _aYang, C. Y. -W | ||
| 990 | _af70dac73ac10000c2517fe5efb8e325f | ||
| 991 | _a255467 | ||
| 999 |
_c206860 _d206860 |
||